Chipmaking systems create the smallest atomic-scale features in 3D Gate-All-Around transistorsPrecision™ Selective Nitride PECVD preserves ...

Applied Materials (AMAT) jumps on new atomic-precision tools for 2nm gate-all-around AI chips—see how they boost ...

The microelectronics revolution might best be characterized by the motto 'smaller is better'. A unique attribute of the silicon metal–oxide–semiconductor field-effect transistor (MOSFET), the ...

To move forward, they must stack transistors vertically and power them from within the silicon itself. The boldest experiments in this new “vertical city” are complementary field-effect transistors ...

Metal-Semiconductor Field-Effect Transistors (MESFETs) have long been pivotal in bridging fundamental semiconductor physics with high-performance electronic applications. As devices that combine metal ...

A lot of researchers are out there working to put an end to the "silicon" in Silicon Valley. That is, they're looking for an electronics material that both conducts electricity better and allows for ...

Characteristics of enhancement-mode (e-mode) GaN, such as positive temperature coefficient of RDS(ON) and a temperature-independent threshold voltage, make them excellent candidates for paralleling.

Anyone working at advanced IC geometries is familiar with the bad news: transistor leakage currents are going up, and intermetal parasitic capacitance is going up. Put the two together, and you have a ...

(Nanowerk News) As our electronics continue to proliferate and become more sophisticated, the race continues for more power efficient and scaleable semiconductor devices — components that use minimal ...

In 1958, the first integrated circuit flip-flop was built using two transistors at Texas Instruments. The chips of today contain more than 1 billion transistors. The memory that could once support an ...